Unveiling a Tunable Moiré Bandgap in Bilayer Graphene/hBN Device by Angle-Resolved Photoemission Spectroscopy

Over the years, great efforts have been devoted in introducing a sizable and tunable band gap in graphene for its potential application in next-generation electronic devices. The primary challenge in modulating this gap has been the absence of a direct method for observing changes of the band gap in momentum space. In this study, advanced spatial- and angle-resolved photoemission spectroscopy technique is employed to directly visualize the gap formation in bilayer graphene, modulated by both displacement fields and moiré potentials. The application of displacement field via in situ electrostatic gating introduces a sizable and tunable electronic bandgap, proportional to the field strength up to 100 meV. Meanwhile, the moiré potential, induced by aligning the underlying hexagonal boron nitride substrate, extends the bandgap by ≈20 meV. Theoretical calculations effectively capture the experimental observations. This investigation provides a quantitative understanding of how these two mechanisms collaboratively modulate the band gap in bilayer graphene, offering valuable guidance for the design of graphene-based electronic devices.