Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Nanoelectronics with Two-Dimensional Magnets.

Nano letters·2026

Same author

Nitrogen vacancies in graphitic carbon nitride and their role in heterogeneous photocatalysis.

Materials horizons·2026

Same author

Amorphous intermediates and discovery of a kinetic polymorph of BiVO<sub>4</sub> from heating V+Bi+Zn single-source precursors.

Nature communications·2026

Same author

qNEP: A Highly Efficient Neuroevolution Potential with Dynamic Charges for Large-Scale Atomistic Simulations.

Journal of chemical theory and computation·2026

Same author

Evolution of Excited States in Bismuth Vanadate: Trapping and Kinetic Pathways.

The journal of physical chemistry letters·2026

Same author

Suspension polymerization of bioelectronic interfaces on living cells.

Materials horizons·2026

Same journal

Correction to "Ultrasonication-Triggered Ubiquitous Assembly of Magnetic Janus Amphiphilic Nanoparticles in Cancer Theranostic Applications".

Nano letters·2026

Same journal

Tunable Proximity Valley Splitting Via Interfacial Exchange Pinning in WSe<sub>2</sub>-CrBr<sub>3</sub>-CrPS<sub>4</sub> Heterostructures.

Nano letters·2026

Same journal

Nanoscale Organization of Membrane Tension during Neutrophil Extracellular Trap Formation Revealed by Fluorescence Lifetime Imaging.

Nano letters·2026

Same journal

Pressure-Tuned Plasmonic Propagation on a Silver Nanowire.

Nano letters·2026

Same journal

Intrinsic Superconducting Gap in Bilayer KCa<sub>2</sub>Fe<sub>4</sub>As<sub>4</sub>F<sub>2</sub> and Decoupled Monolayer FeAs.

Nano letters·2026

Same journal

Programmable Hydrogen-Assisted Chemical Vapor Deposition Growth and Bipolar Transport in Two-Dimensional MoO<sub>2</sub> Nanoflakes.

Nano letters·2026

See all related articles

Search research articles

Related Experiment Video

Updated: May 31, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Ultranarrow Semiconductor WS₂ Nanoribbon Field-Effect Transistors.

Md Anamul Hoque¹, Alexander Yu Polyakov², Battulga Munkhbat²

¹Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden.

|January 23, 2025

Summary

This summary is machine-generated.

Researchers developed a new method to create ultranarrow tungsten disulfide (WS2) nanoribbons, enabling tunable nanoscale electronic devices. This technique controls nanoribbon width for advanced semiconductor applications.

Keywords:

2D semiconductors TMDs WS2 crystallographically controlled nanostructuring diodes field-effect transistors nanoribbon transition metal dichalcogenides zigzag edges

More Related Videos

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Published on: April 21, 2016

Related Experiment Videos

Last Updated: May 31, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Published on: April 21, 2016

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Semiconducting transition metal dichalcogenides (TMDs) are promising for high-performance, energy-efficient nanoscale electronics.
Fabricating sub-30 nm channels and achieving atomic-scale edge control in TMD field-effect transistors (FETs) remain challenging.

Purpose of the Study:

To demonstrate a crystallography-controlled nanostructuring technique for ultranarrow tungsten disulfide (WS2) nanoribbons.
To investigate the electrical properties of WS2 nanoribbon junctions with varying widths.
To explore the impact of narrow channel effects on the transport properties of WS2 nanoribbon FETs.

Main Methods:

Crystallography-controlled nanostructuring technique.
Fabrication of ultranarrow tungsten disulfide (WS2) nanoribbons (sub-10 nm width).
Characterization of current-voltage (I-V) characteristics of WS2 nanoribbon junctions and FETs.

Main Results:

Successfully fabricated WS2 nanoribbons as narrow as sub-10 nm.
WS2 nanoribbon junctions with different widths exhibited diodic current-voltage characteristics.
Transport properties of nanoribbon FETs were dominated by narrow channel effects, with mobility limited by edge scattering.

Conclusions:

The developed technique enables the creation and tuning of nanoscale device properties by controlling nanostructure size.
Findings provide a pathway for developing next-generation van der Waals semiconductor-based devices and circuits at the nanometer scale.
Edge scattering significantly impacts carrier mobility in ultranarrow channels, crucial for future nanodevice design.