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Updated: May 31, 2025
Design, Surface Treatment, Cellular Plating, and Culturing of Modular Neuronal Networks Composed of Functionally Inter-connected Circuits
Published on: April 15, 2015
Interface effect based nano-scale TiOvertical synapse device for high-density integration in neuromorphic computing
Seojin Cho1, Geonhui Han2, Chuljun Lee3
1Department of Semiconductor Engineering, Kwangwoon University, Seoul 01897, Republic of Korea.
Abstract:
To implement a neuromorphic computing system capable of efficiently processing vast amounts of unstructured data, a significant number of synapse and neuron devices are needed, resulting in increased area demands. Therefore, we developed a nanoscale vertically structured synapse device that supports high-density integration. To realize this synapse device, the interface effects between the resistive switching layer and the electrode were investigated and utilized. Electrical and physical analyses were conducted to comprehend the operational mechanism of the developed synapse device. The results indicate that oxygen ions from the resistive switching layer were absorbed by the electrode, forming metal-oxygen bonds. TheVOconcentration in the switching layer that can change the total conductance of the device. To assess its potential as a synapse device in the neuromorphic system, the developed device was evaluated through pattern recognition simulation.
