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Updated: May 31, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Effect of Fabricating Process on the Performance of Two-Dimensional p-Type WSe2 Field Effect Transistors
Jingmei Tang1, Kun He1,2, Ping Lu1
1Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China.
Abstract:
Two-dimensional (2D) transition metal dichalcogenides (TMDs), such as WSe2, are promising candidates for next-generation integrated circuits. However, the dependence of intrinsic properties of TMD devices on various processing steps remains largely unexplored. Here, using pristine p-type WSe2 devices as references, we comprehensively studied the influence of each step in traditional nanofabrication methods on device performance. Our findings reveal that electron beam exposure significantly alters the electrical conductivity of WSe2 due to the doping and diffusion effects of electrons. During ultraviolet lithography, the bilayer WSe2 device immersed in a 4‰ NaOH developer also showed substantial quality degradation (40%-84%). In this case, we combined laser patterning with the transfer electrode method to fabricate a high-performance device with a current density of 278.5 μA/μm and an on/off ratio of 3.9 × 107. This work reveals the influence of the nanofabrication process on TMD devices and guides for improving device performance.
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