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Related Experiment Video

Updated: May 31, 2025

Writing and Low-Temperature Characterization of Oxide Nanostructures

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

Ultralow Power Cold-Fuse Memory Based on Metal-Oxide-CNT Structure.

Wufan Chen¹, Xueping Li², Xuezhou Ma¹

¹Key Lab for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China.

|January 24, 2025

Summary

This summary is machine-generated.

Researchers developed a novel "cold" fuse (C-fuse) memory using carbon nanotube field-effect transistors. This secure one-time programmable (OTP) memory offers ultra-low power consumption and high performance for advanced electronic circuits.

Keywords:

CNT FETs cold breakdown cold fuse gate tunneling ultralow power

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Area of Science:

Semiconductor device physics
Nanomaterials science
Secure memory technology

Background:

One-time programmable (OTP) memory is crucial for chip security.
Traditional dielectric breakdown OTP memory suffers from high programming currents and power consumption.

Purpose of the Study:

To introduce a new OTP memory mechanism based on carbon nanotube (CNT) field-effect transistors.
To develop a secure, low-power alternative to conventional OTP memory.

Main Methods:

Investigated gate tunneling-induced "cold" breakdown in CNT field-effect transistors.
Constructed a "cold" fuse (C-fuse) memory device utilizing this phenomenon.
Characterized the C-fuse memory's programming current, resistance ratio, retention time, and uniformity.

Main Results:

Demonstrated a gate tunneling-induced "cold" breakdown in CNTs, distinct from dielectric breakdown.
Achieved ultra-low programming current (10^-12 A) and a high resistance ratio (>10^11).
Exhibited excellent long-term data retention (>10 years) and good device uniformity.

Conclusions:

The C-fuse memory offers superior performance and significantly lower power consumption compared to traditional OTP.
This represents the first OTP memory based on low-dimensional nanomaterials.
C-fuse memory shows great potential for next-generation secure storage circuits.