A Negative Capacitance Field-Effect Transistor with High Rectification Efficiency for Weak-Energy 2.45 GHz Microwave...

Area of Science:

• Semiconductor device physics
• Electronic circuits
• Wireless power transmission

Background:

• Conventional Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) exhibit limited rectification efficiency at low power densities.
• Radio Frequency to Direct Current (RF-DC) circuits are crucial for energy harvesting and wireless power transmission.

Purpose of the Study:

• To design and propose a silicon-based Negative Capacitance Field-Effect Transistor (NCFET) as a superior rectifying device for RF-DC circuits.
• To enhance rectification efficiency, particularly under low-power density conditions, for microwave wireless power transmission applications.

Main Methods:

• Theoretical analysis and device simulations were employed to optimize NCFET performance.
• Key parameters investigated include ferroelectric material anisotropy, ferroelectric layer thickness, and active region doping concentration.
• A half-wave rectifier circuit utilizing the optimized NCFET was designed and verified via transient simulations.

Main Results:

• The NCFET rectifier achieved rectification efficiencies of 16.1% and 29.75% at input power densities of -10 dBm and -6 dBm, respectively, at 2.45 GHz.
• These efficiencies are 7.15 and 2.3 times higher than those of conventional silicon-based MOS devices.
• The NCFET rectifier significantly outperformed existing CMOS rectifiers in literature.

Conclusions:

• The proposed NCFET demonstrates superior rectification performance under low-power density conditions.
• This NCFET offers an efficient device solution for advancing microwave wireless power transmission systems.