Related Experiment Video
Updated: May 31, 2025

Autonomous and Rechargeable Microneurostimulator Endoscopically Implantable into the Submucosa
Published on: September 27, 2018
Pass-Transistor-Enabled Split Input Voltage Level Shifter for Ultra-Low-Power Applications
Chakali Chandrasekhar1, Mohammed Mahaboob Basha2, Sari Mohan Das3
1Department of ECE, Sri Venkateswara College of Engineering, Tirupati 517507, AP, India.
Abstract:
In modern ICs, sub-threshold voltage management plays a significant role due to its perspective on energy efficiency and speed performance. Level shifters (LSs) play a critical role in signal exchange among multiple voltage domains by ensuring signal integrity and the reliable operation of ICs. In this article, a Pass-Transistor-Enabled Split Input Voltage Level Shifter (PVLS) is designed for area, delay, and power-efficient applications with a wide voltage conversion range. The represented low-power LS structure is a general blend of both pull-up and pull-down networks that perform level-up or level-down shifts. The proposed PVLS is incorporated with the multi-threshold CMOS technique and a load-balancing driving split inverter to limit high static current, leakage power, and performance degradation. The schematic structure could be able to convert voltages from low to high as well as high to low. The architecture design has the lowest silicon area. The implementation of the proposed design was taken under 55 nm CMOS technology. The represented LS could be able to convert voltage ranges between 0.3 V and 1.3 V, which has a dynamic power of 2.00 nW. The overall propagation delay of the LS is 90 ps and an area of 7.66 µm2 for an input frequency of 1 MHz.
More Related Videos
10:50Design and Use of a Low Cost, Automated Morbidostat for Adaptive Evolution of Bacteria Under Antibiotic Drug Selection
Published on: September 27, 2016
08:25Construction of a Wireless-Enabled Endoscopically Implantable Sensor for pH Monitoring with Zero-Bias Schottky Diode-based Receiver
Published on: August 27, 2021
Related Concept Videos
Voltage Dividers
Kirchhoff's voltage law implies that the sum of the voltages across the resistors in series equals the source voltage. This means that the...
Bipolar Junction Transistor
Voltage Doubler Circuit
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
MOSFET Amplifiers
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...