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Updated: May 31, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

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Published on: November 1, 2013

W-Band GaAs pHEMT Power Amplifier MMIC Stabilized Using Network Determinant Function.

Seong-Hee Han¹, Dong-Wook Kim¹

¹Department of Radio and Information Communications Engineering, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea.

|January 25, 2025

Summary

This study introduces a W-band power amplifier MMIC for high-precision millimeter-wave systems. The device achieves excellent gain and output power with high efficiency using a GaAs pHEMT process.

Keywords:

GaAs pHEMT MMIC W-band network determinant function power amplifier

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Area of Science:

Electrical Engineering
Microwave Engineering
Semiconductor Devices

Background:

Millimeter-wave systems require high-performance power amplifiers.
Monolithic Microwave Integrated Circuits (MMICs) offer miniaturization and integration advantages.

Purpose of the Study:

To design and fabricate a W-band power amplifier MMIC for high-precision millimeter-wave applications.
To achieve simultaneous matching for gain and output power with minimal components.

Main Methods:

Fabrication using a 0.1 µm Gallium Arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) process.
Stability analysis using the network determinant function for linear and nonlinear conditions.
Simultaneous matching techniques for gain and output power optimization.

Main Results:

Achieved linear gain exceeding 20 dB across the 88-98 GHz band.
Delivered output power of 23.8-24.1 dBm with power gain of 17.3-17.9 dB (88-97 GHz).
Reached a maximum power-added efficiency (PAE) of 24% at 94 GHz.

Conclusions:

The developed W-band power amplifier MMIC demonstrates robust performance for high-precision millimeter-wave systems.
The design achieved high gain, output power, and efficiency with a compact footprint.
The GaAs pHEMT process is suitable for fabricating advanced millimeter-wave power amplifiers.