Trench MOS Schottky Diodes: A Physics-Based Analytical Model Approach to Charge Sharing

Area of Science:

• Semiconductor device physics
• Power electronics
• Analytical modeling

Background:

• Trench MOS Barrier Schottky (TMBS) rectifiers offer improved performance over planar Schottky rectifiers.
• Existing analytical models for TMBS devices are limited, with most research relying on complex numerical simulations.

Purpose of the Study:

• To develop a novel physics-based analytical model for TMBS rectifiers under reverse bias.
• To elucidate electric field and potential distribution within the TMBS mesa region.
• To provide a more accessible alternative to computationally intensive simulations for TMBS device design.

Main Methods:

• Developed a physics-based analytical model utilizing the concept of shared charge between Schottky and MOS junctions.
• Analyzed electric field distribution influenced by trench geometry and bias conditions.
• Validated the model by comparing analytical results with TCAD simulations.

Main Results:

• The model accurately captures electric field behavior and potential distribution in TMBS devices.
• Demonstrated strong agreement between analytical predictions and TCAD simulation results.
• Identified key design parameters like trench depth, oxide thickness, and doping concentration affecting device performance.

Conclusions:

• The new analytical model offers accurate and efficient insights into TMBS rectifier behavior.
• This model serves as a valuable tool for optimizing TMBS device design for high-efficiency, high-voltage applications.
• The findings support advancements in power supplies, automotive electronics, and renewable energy systems.