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Updated: May 31, 2025
09:06
Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
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Controlling Magnetization in Ferromagnetic Semiconductors by Current-Induced Spin-Orbit Torque
Sanghoon Lee1, Xinyu Liu2, Jacek Furdyna2
1Physics Department, Korea University, Seoul 136-701, Republic of Korea.
Materials (Basel, Switzerland)
|January 25, 2025
Summary
This review explores manipulating magnetization in ferromagnetic semiconductors using electric-current-induced spin-orbit torque. Researchers demonstrate efficient switching in (Ga,Mn)As layers, paving the way for novel magnetic memory devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Ferromagnetic semiconductors (FMSs) offer unique properties for spintronic applications.
- Electric-current-induced spin-orbit torque (SOT) is a promising mechanism for manipulating magnetization.
Purpose of the Study:
- To review the manipulation of magnetization in (Ga,Mn)As ferromagnetic semiconductors using SOT.
- To compare SOT efficiency in FMSs with conventional heavy-metal/ferromagnet bilayers.
- To discuss prototype devices and future directions for SOT-based magnetic memories.
Main Methods:
- Growth of (Ga,Mn)As FMS layers via molecular beam epitaxy.
- Generation of spin-polarized currents for SOT.
- Magnetization switching experiments in FMS layers with varying easy axes.
- Comparison of SOT efficiency in single-layer FMS and heavy-metal/ferromagnet heterostructures.
Main Results:
- Demonstrated efficient magnetization switching in (Ga,Mn)As FMS layers using SOT.
- Compared the efficiency of SOT in single-layer FMS to conventional bilayers.
- Showcased prototype read-write devices utilizing SOT in FMSs.
Conclusions:
- SOT manipulation in FMSs is effective for switching magnetization.
- FMS-based SOT offers potential for practical magnetic memory applications.
- Further research is needed to optimize FMS structures for advanced spintronic devices.
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