Related Experiment Video
Updated: May 31, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
First-Principles Study of the Heterostructure, ZnSb Bilayer/h-BN Monolayer for Thermoelectric Applications
Zakariae Darhi1, Larbi El Farh1, Ravindra Pandey2
1Department of Physics, Mohamed 1st University, Oujda 60000, Morocco.
Abstract:
ZnSb is widely recognized as a promising thermoelectric material in its bulk form, and a ZnSb bilayer was recently synthesized from the bulk. In this study, we designed a vertical van der Waals heterostructure consisting of a ZnSb bilayer and an h-BN monolayer to investigate its electronic, elastic, transport, and thermoelectric properties. Based on density functional theory, the results show that the formation of this heterostructure significantly enhances electron mobility and reduces the bandgap compared to the ZnSb bilayer, thereby increasing its power factor. These findings highlight the potential of the h-BN monolayer-supported ZnSb bilayer heterostructure in thermoelectric applications, where maximizing energy conversion efficiency is essential.

