Advanced measurement methods for high-power gallium nitride high electron mobility transistors

Area of Science:

• Electrical Engineering
• Materials Science

Background:

• Semiconductor device testing is fundamental to circuit design.
• Increasing power levels of devices under test (DUTs) necessitate advanced testing solutions.
• High-power transistors present unique challenges including self-oscillation and safety risks during testing.

Purpose of the Study:

• To develop advanced measurement methods for high-power semiconductor devices.
• To enhance the stability, security, and measuring capability of test systems.
• To address challenges associated with high output power, self-oscillation, and safety risks in transistor measurements.

Main Methods:

• Introduction of wideband limiter and bias filter network for improved circuit stability and security.
• Utilizing a spectrum analyzer to measure output signals before testing, preventing self-oscillation damage.
• Development of an efficient test system for current and S-parameters with coaxial fixtures and cascade bridges for pulse conditions.

Main Results:

• Successfully tested a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) with high power density.
• Obtained complete I-V curves and S-parameter curves for the tested device.
• Demonstrated the effectiveness and applicability of the proposed advanced measurement methods.

Conclusions:

• The proposed advanced measurement methods significantly improve the testing of high-power transistors.
• The innovative techniques enhance measurement security, stability, and capability.
• These methods are effective and applicable for characterizing devices like GaN HEMTs.