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Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

277
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
277

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In-pixel foreground and contrast enhancement circuits with customizable mapping.

Md Rahatul Islam Udoy1, Md Mazharul Islam1, Elijah Johnson2

  • 1Department of Electrical Engineering and Computer Science, University of Tennessee, Knoxville, TN, 37996, USA.

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|January 28, 2025
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Summary

This study introduces an in-pixel circuit using HyperFET devices for adaptive image contrast enhancement. It significantly boosts image quality by improving foreground visibility and overall contrast in real-time.

Keywords:
Background suppressionContrast enhancementContrast stretchingHyperFETImage sensorIn-pixel processingPTMPixel-level processing

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Area of Science:

  • Integrated circuit design
  • Image processing hardware
  • Semiconductor device physics

Background:

  • Traditional image processing often requires external circuitry, increasing system complexity and power consumption.
  • Limitations in existing pixel circuits hinder real-time adaptive contrast enhancement in dynamic environments.
  • The need for on-chip image processing solutions is growing for advanced imaging systems.

Purpose of the Study:

  • To develop and evaluate an in-pixel contrast enhancement circuit utilizing novel HyperFET devices.
  • To demonstrate the circuit's capability for both foreground isolation and general contrast improvement.
  • To assess the circuit's adaptability to different operating modes and real-time adjustments.

Main Methods:

  • Design of an in-pixel circuit integrating a MOSFET and a phase transition material (PTM) into a HyperFET.
  • Implementation of foreground enhancement and contrast enhancement modes within the pixel circuit.
  • Development of a pixel circuit model and its application to a full pixel array for simulation.
  • HSPICE simulations to quantify performance metrics like Michelson Contrast Ratio (CR) and Signal-to-Noise Ratio (SNR).

Main Results:

  • Achieved a nearly 6x increase in Michelson Contrast Ratio (CR) in foreground enhancement mode.
  • Demonstrated effective suppression of background pixels for enhanced foreground object visibility.
  • Verified adaptability through customizable contrast enhancement functions for various conditions.
  • Process variation and SNR analysis confirmed the design's robustness.

Conclusions:

  • The proposed in-pixel circuit offers significant improvements in image quality and adaptive contrast enhancement.
  • HyperFET technology enables efficient, real-time image processing directly within pixels.
  • The design shows strong potential for next-generation imaging systems requiring high performance and adaptability.