Single-pass superluminescent diodes with grazing stripe waveguide.

Area of Science:

• Semiconductor Optoelectronics
• Quantum Dot Devices
• Photonics Engineering

Background:

• Superluminescent diodes (SLDs) are crucial for applications requiring broad, high-power emission.
• Traditional SLD designs often face challenges with optical feedback and limited output power.
• Indium Gallium Arsenide / Gallium Arsenide (InGaAs/GaAs) quantum well-dot structures offer tunable emission properties.

Purpose of the Study:

• To investigate a novel and simple stripe waveguide design for InGaAs/GaAs quantum well-dot superluminescent diodes (SLDs).
• To enhance optical power output by effectively suppressing optical feedback.
• To characterize the emission properties of the developed SLDs in the 950-1150 nm spectral range.

Main Methods:

• Fabrication of InGaAs/GaAs quantum well-dot structures.
• Implementation of a novel stripe waveguide design incorporating a chip side facet.
• Characterization of continuous-wave (CW) optical power and emission spectra (FWHM).

Main Results:

• The novel stripe waveguide design effectively suppressed optical feedback.
• Continuous-wave (CW) optical power as high as 150 mW was achieved.
• Broad emission spectra with a 20 nm full width at half maximum (FWHM) were observed in the 950-1150 nm range.

Conclusions:

• The proposed simple stripe waveguide design is effective for InGaAs/GaAs quantum well-dot SLDs.
• The design enables high optical power output and broad spectral emission.
• This advancement holds promise for applications requiring high-performance light sources.