Al and Zn Doping in InON Thin Films and Their Optical, Electrical, and Electrochromic Properties
Xiangming Zeng1,2,3, Jiangbin Su1,2,4, Chunyan Xu1,2
1Jiangxi Provincial Key Laboratory of Power Batteries & Energy Storage Materials, Xinyu University, Xinyu 338004, PR China.
ACS Omega
|February 3, 2025
Summary
Doping indium oxynitride (InON) films with aluminum (Al) or zinc (Zn) tunes their electrochromic properties. Al doping enhances redox activity, while Zn doping impacts crystallinity, both affecting optical modulation and EC response for advanced applications.
Area of Science:
- Materials Science
- Electrochemistry
- Thin Film Technology
Background:
- Indium oxynitride (InON) exhibits desirable properties like high mobility and transparency.
- Limited research exists on the electrochromic (EC) properties of InON, particularly concerning doping effects.
Purpose of the Study:
- To investigate the impact of aluminum (Al) and zinc (Zn) doping on InON films.
- To analyze how doping affects the composition, structure, optical, electrical, and EC characteristics of InON.
Main Methods:
- Preparation of InON films using DC magnetron sputtering.
- Comprehensive characterization of film properties, including composition, structure, morphology, optical, electrical, and EC performance.
Main Results:
- Al doping increased surface amino groups, roughness, optical band gap, and redox activity.
- Zn doping introduced ZnO peaks, smoothed surfaces, reduced band gap, and decreased electrochemical performance.
- Both doping types negatively impacted optical modulation but allowed tuning of EC response peaks and wavelength ranges.
Conclusions:
- Doping plays a crucial role in optimizing the electrochromic performance of InON films.
- Tailoring InON properties through Al and Zn doping shows potential for advanced applications.
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