Related Experiment Video
Updated: May 29, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Unusual phase transition mechanism induced by shear strain in Si2BN planar structures and comparison with graphene:
Zacharias G Fthenakis1,2, Madhu Menon3,4
1Istituto Nanoscienze, Consiglio Nazionale delle Ricerche (CNR), 56127 Pisa, Italy. zacharias.fthenakis@nano.cnr.it.
Abstract:
Using ab initio methods we show that by applying shear strain, a phase transition occurs between the AB and the AA Si2BN planar sheets. Si-Si bonds stretch and bend towards the strain direction, causing an internal displacement of the remaining almost unchanged Si2BN strips. As the shear strain increases, Si-Si bonds weaken and break, while leading to new Si-Si bond formation and causing the phase transition. The planar structure is maintained throughout the application of the strain, with no buckling, a phenomenon not reported so far in other 2D materials. Performing the same calculations for graphene we show that its structural deformations are strikingly different and result in buckling.
More Related Videos
06:57Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
13:56Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
Related Concept Videos
Shearing Strain
Transformation of Plane Strain
Under plane strain conditions, typical for members where one dimension significantly exceeds the others, deformations and resultant strains are...
Conformations of Cycloalkanes