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Constructing topological insulator-ferromagnet heterojunctions of Bi2Se3/Fe3GeTe2and Bi2Te3/Fe3GaTe2
Xinke Liang1, Fuhong Chen1, Liu Yang1
1Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, People's Republic of China.
Abstract:
Heterostructures composed of topological insulators and ferromagnets are predicted to exhibit the quantum anomalous Hall effect (QAHE). The morphology and interfacial structure have a significant impact on physical properties and transport performances of such heterostructures. Here, we report the epitaxial growth of topological insulators Bi2Se3and Bi2Te3thin films on ferromagnetic substrates of Fe3GeTe2and Fe3GaTe2, respectively. The morphology and composition of the Bi2Se3and Bi2Te3thin films were characterized using atomic force microscopy, x-ray photoelectron spectroscopy and Raman spectroscopy. After optimizing growth parameters, we successfully generated large-area films with high crystallinity, presenting new types of topological insulator-ferromagnet heterojunctions for the pursuit of QAHE.
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