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Electrical mutual switching in a noncollinear-antiferromagnetic-ferromagnetic heterostructure
Ju-Young Yoon1,2, Yutaro Takeuchi1,3,4, Ryota Takechi1,2
1Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai, Japan.
Nature Communications
|February 5, 2025
Summary
This study introduces a novel current-programmed spin-orbit torque (SOT) device. It demonstrates active control over SOT polarity for programmable magnetic data encoding, paving the way for advanced computing.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Spin-orbit torque (SOT) is crucial for electrical control of magnetic states.
- Current SOT devices lack active manipulation of SOT polarity.
- Programmable SOT devices require electrical control of spin polarization.
Purpose of the Study:
- To demonstrate a proof-of-concept current-programmed SOT device.
- To achieve active manipulation of intrinsic SOT polarity.
- To explore applications in unconventional computing.
Main Methods:
- Fabrication of a Mn3Sn/Mo/CoFeB heterostructure.
- Utilizing noncollinear antiferromagnetic/ferromagnetic coupling.
- Applying current to induce mutual magnetic switching.
Main Results:
- Demonstrated current-induced switching in CoFeB layer.
- Showcased reversal of Mn3Sn magnetic orientation by CoFeB spin current.
- Established a spin-valve-like protocol for reversible spin source and electrode functionality.
Conclusions:
- Developed a novel current-programmed SOT device with tunable polarity.
- The device enables flexible programming of magnetic states for data encoding.
- Potential applications in unconventional logic and neuromorphic computing architectures.
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