Comparative Study of Current-Induced Torque in Cr/CoFeB/MgO and W/CoFeB/MgO.
Shunya Chiba1,2, Yukihiro Marui1, Hideo Ohno1,3,4,5
1Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan.
Nano Letters
|October 25, 2024
Summary
Orbital torque (OT) and spin-orbit torque (SOT) were compared in magnetic heterostructures. Results show OT can be comparable to SOT, with potential for SOT systems to exhibit OT under specific conditions.
Area of Science:
- Condensed matter physics
- Materials science
- Spintronics
Background:
- Orbital torque (OT) is debated for magnetic heterostructures, contrasting with spin-orbit torque (SOT).
- SOT is a promising mechanism for next-generation magnetoresistive random access memories (MRAM).
Purpose of the Study:
- To compare OT and SOT in representative systems (Cr/CoFeB/MgO and W/CoFeB/MgO).
- To investigate the potential emergence of OT in archetypal SOT stacks.
Main Methods:
- Fabrication and characterization of Cr/CoFeB/MgO and W/CoFeB/MgO heterostructures.
- Systematic variation of layer thicknesses (Cr, CoFeB, W).
- Torque measurements and analysis.
Main Results:
- Cr/CoFeB/MgO demonstrated substantial torque, comparable to or exceeding W/CoFeB/MgO, especially with thicker Cr and CoFeB layers.
- W/CoFeB/MgO showed a sign change in torque with increasing W and CoFeB thicknesses.
- Evidence suggests a mechanism crossover from SOT to OT in W/CoFeB/MgO.
Conclusions:
- Orbital torque can be significant in magnetic heterostructures, rivaling spin-orbit torque.
- Spin-orbit torque systems may exhibit orbital torque under specific thickness conditions.
- Findings clarify opportunities and challenges for SOT and OT in spintronic devices.
Keywords:
magnetoresistive random access memoryorbital Hall effectorbital torqueorbitronicsspin Hall effectspin orbit torquespintronicsMore Related Videos
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