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Multiple Carrier Generation at an Exceptionally Low Energy Threshold.

Riyanka Karmakar1, Pravrati Taank1, Debjit Ghoshal2

  • 1Indian Institute of Science Education and Research Bhopal, Department of Physics, Bhopal 462066, India.

Physical Review Letters
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We developed a new method for multiple carrier generation (MCG) using carrier-donor scattering, significantly lowering the energy threshold. This breakthrough enables efficient MCG in materials like MoS2, advancing optoelectronics.

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Area of Science:

  • Optoelectronics
  • Quantum Materials
  • Semiconductor Physics

Background:

  • Multiple carrier generation (MCG) promises advancements in quantum sensing, metrology, lasers, and photovoltaics.
  • Existing MCG methods suffer from low efficiency and high threshold photon energies (≥2Eg), restricting their use to low band gap materials.
  • Overcoming these limitations is crucial for broader applications of MCG technology.

Purpose of the Study:

  • To introduce a novel MCG approach that overcomes the high threshold energy limitation.
  • To demonstrate the feasibility of this new method in a practical material system.
  • To enhance the efficiency and applicability of MCG for next-generation optoelectronic devices.

Main Methods:

  • Leveraging carrier-donor scattering to excite secondary electrons from donor states below the conduction band.
  • Utilizing strong Coulomb interaction, reduced dielectric screening, and slow hot carrier cooling.
  • Experimental demonstration in monolayer (1L) MoS2 using electron-donating chalcogen vacancy states.

Main Results:

  • Achieved an exceptionally low MCG threshold of ~1.12Eg in 1L MoS2, a first for this material.
  • Demonstrated a quantum yield exceeding 3 by increasing photon energy to 1.65Eg.
  • Significantly advanced MCG capabilities beyond existing methods.

Conclusions:

  • The novel carrier-donor scattering approach effectively reduces the MCG threshold energy.
  • This method opens up MCG applications in a wider range of materials, including those with higher band gaps.
  • The findings pave the way for high-performance optoelectronic devices with tunable spectral ranges from infrared to ultraviolet.