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Imaging Domain Walls in van der Waals Ferroelectrics Using Tip-Enhanced Second Harmonic Generation.

Alexander B C Mantilla¹, Chih-Feng Wang², Jacob Parker¹

¹Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164, United States.

The Journal of Physical Chemistry Letters

|February 6, 2025

Summary

Researchers imaged nanoscale domain walls in 2D ferroelectric materials using tip-enhanced second harmonic generation (TESHG). This technique achieved 16 nm resolution, revealing nonlocal effects extending into adjacent domains, crucial for advanced electronics.

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Optimized Setup and Protocol for Magnetic Domain Imaging with In Situ Hysteresis Measurement

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Published on: November 7, 2017

Area of Science:

Condensed Matter Physics
Materials Science
Nanotechnology

Background:

Van der Waals ferroelectrics are promising for next-generation memory and neuromorphic computing.
Understanding nanoscale domain wall behavior in these materials is critical but challenging.
Existing characterization methods lack the required spatial resolution.

Purpose of the Study:

To demonstrate nanoscale imaging of domain walls in 2D ferroelectric materials.
To investigate the spatial extent and properties of ferroelectric domain walls.
To explore the potential of tip-enhanced second harmonic generation (TESHG) for nanoscale characterization.

Main Methods:

Utilized tip-enhanced second harmonic generation (TESHG) microscopy.
Employed a narrow-band near-infrared laser for off-resonant signal enhancement.
Achieved high spatial resolution for imaging nanoscale features.

Main Results:

Successfully imaged domain walls in 2D ferroelectric α-In2Se3 with 16 nm spatial resolution.
Generated robust and reproducible TESHG signals.
Identified spectral features indicating nonlocal effects from domain walls extending into adjacent domains.

Conclusions:

TESHG is a powerful technique for nanoscale imaging of ferroelectric domain walls.
Nonlocal effects at domain walls are significant and extend beyond the immediate interface.
Findings provide crucial insights for designing advanced ferroelectric devices.