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A quantum dot in germanium proximitized by a superconductor.

Lazar Lakic1, William I L Lawrie1, David van Driel2

  • 1Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark.

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Researchers created a novel quantum dot device using germanium, enabling tunable superconducting properties for advanced quantum computing applications. This breakthrough advances topological superconductivity in group IV materials.

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Area of Science:

  • Quantum physics
  • Materials science
  • Condensed matter physics

Background:

  • Germanium is a promising group IV material for superconductor-semiconductor hybrid devices.
  • Topological superconductivity is crucial for robust quantum information processing.
  • Quantum dots offer a platform for exploring novel quantum phenomena.

Purpose of the Study:

  • To demonstrate a tunable quantum dot in a germanium heterostructure proximitized by a superconducting lead.
  • To investigate the interplay between quantum dots and superconductivity in germanium.
  • To explore the potential of germanium for topological quantum computing and qubit modalities.

Main Methods:

  • Fabrication of a Ge/SiGe heterostructure with a platinum germanosilicide (PtSiGe) superconducting lead.
  • Creation of a superconducting lead-quantum dot-superconducting lead junction.
  • Characterization of coupling strength, charging energy, induced gap, and critical magnetic fields.

Main Results:

  • Demonstrated tunability of coupling strength and gate control over energy ratios.
  • Achieved control over the system's ground state parity (even/odd).
  • Measured a critical out-of-plane magnetic field of 0.90 ± 0.04 T and observed sub-gap spin splitting.

Conclusions:

  • The demonstrated germanium-based quantum dot platform is suitable for exploring topological superconductivity.
  • This work opens avenues for germanium-based superconducting qubits and Josephson junction arrays.
  • The findings contribute to the development of advanced quantum devices utilizing group IV materials.