Synthesis, Characterization, and Roles of Vacancy Defects in Polymer and Graphitized Carbon Nitride Photocatalysts: A...

Vacancy defect graphitic carbon nitride (g-C₃N₄) and conjugated polyimide (PI) polymer photocatalysts have become increasingly recognized as metal-free photocatalysts featuring an appropriate bandgap. The narrow absorption spectrum of visible light and the rapid recombination rate of the photoexcited charge carriers in PI polymers and g-C₃N₄ impede its photocatalytic performance. The presence of oxygen vacancies (OVs) in PI polymer photocatalysts, as well as nitrogen vacancies (NVs) and carbon vacancies (CVs) in g-C₃N₄, can significantly enhance the migration of photogenerated electrons. Adding vacancies to improve the electronic structure and band gap width can greatly enhance the photocatalytic efficiency of PI polymers and g-C₃N₄. Defect engineering is important for increasing the photocatalytic ability of PI-polymer and g-C₃N₄. There remains a notable absence of thorough review papers covering the synthesis, characterization, and applications of vacancy-rich PI-polymer and g-C₃N₄ in photocatalysis. This review paper examines the roles of OVs in PI-polymer, NVs, and CVs in g-C₃N₄ and thoroughly summarizes the preparation approaches employed before and after, as well as during polymerization. This review scrutinizes spectroscopic characterization techniques, such as EPR, XPS, PAS, XRD, FTIR, and NMR, for vacancy defect analysis. We also reviewed the role of vacancies, which include light absorption, photogenerated charge carrier separation, and transfer dynamics. This review could serve as a comprehensive understanding, a vacancy-engineered design framework, and a practical guide for synthesizing and characterizing.