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Updated: Oct 29, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Enhanced charge transport in a Zn(ii) zigzag chain polymer toward photoresponsive Schottky device fabrication
Ersad Hossain1,2, Sayantan Sil3, Jakir Ahmed4
1Department of Chemistry, Aliah University New Town Kolkata 700 160 India chmmir@gmail.com.
Abstract:
Herein, we report the synthesis of a new Zn(ii)-based coordination polymer (CP), [Zn(DBTP)(4-avp)2(H2O)]·(solvent) x (CP1), using a 2,5-dibromoterephthalic acid (H2DBTP) and [4-[2-(9-anthryl)vinyl]pyridine (4-avp)] based mixed-ligand system. The synthesized CP1 forms a one-dimensional (1D) zigzag chain architecture through the coordination of DBTP ligands with Zn(ii) centers. Further stabilization through π⋯π stacking interactions causes the creation of a two-dimensional (2D) supramolecular network. Current-voltage (I-V) experiments show that CP1 has semiconducting properties and acts as a Schottky barrier diode. The experimental findings are validated by density functional theory (DFT) calculations, which include band gap and density of states (DOS) analyses. Notably, the electrical conductivity of CP1 increases significantly from 7.04 × 10-4 S cm-1 in the dark to 24.26 × 10-4 S cm-1 under light illumination. This enhancement is attributed to the strong light absorption capability of the 4-avp ligands, which act as antenna units to generate and promote charge carriers, thereby improving carrier mobility and overall electrical conductivity. These findings indicate that the synthesized photoresponsive material holds considerable promise for next-generation optoelectronic and energy-related applications. Thus, the present work is expected to inspire further research on functional CPs for advanced energy materials.
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