Related Experiment Video
Updated: May 28, 2025

Atom Probe Tomography Studies on the CuIn,GaSe2 Grain Boundaries
Published on: April 22, 2013
Semiconductor-to-metal surface reconstruction in copper selenide/copper heterostructures steered by photoinduced
Meiling Chen1, Wenhao Liu2, Pengcheng Ding1,3
1State Key Laboratory of Urban Water Resource and Environment, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150001, China.
Abstract:
The photoinduced semiconductor-to-metal transition (PSMT) unveils crucial photodynamic mechanisms and holds great promise for information storage, sensing, optoelectronics, optical switches, etc. All previously reported PSMTs have occurred between two structural phases of the same material, lacking real-space evidence at the atomic or molecular level. Herein, we report atomic-scale observations of a photoinduced 'face changing': light irradiation transforms a semiconductor copper selenide (Cu2Se) surface layer on Cu(111) into a well-defined metallic Cu layer. Se atoms sink to form a new Cu2Se sublayer, while the original subsurface Cu atoms are lifted to the top layer. The Cu2Se-to-Cu transition barrier is significantly lower in the excited state compared to the ground state. Thermoactivation enables the reverse transition. The photoinduced Cu2Se-to-Cu and thermoactivated Cu-to-Cu2Se transitions are highly reversible. This work, which demonstrates PSMT between two distinct materials and photo-driven interlayer atom migration, unlocks an unconventional and intriguing route for PSMT and surface modification technologies.
More Related Videos
08:12Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
08:14Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO
Published on: July 31, 2016