Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Metallic Solids

Metallic Solids

Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....

Chirality at Nitrogen, Phosphorus, and Sulfur

Chirality at Nitrogen, Phosphorus, and Sulfur

Chirality is most prevalent in carbon-based tetrahedral compounds, but this important facet of molecular symmetry extends to sp3-hybridized nitrogen, phosphorus and sulfur centers, including trivalent molecules with lone pairs. Here, the lone pair behaves as a functional group in addition to the other three substituents to form an analogous tetrahedral center that can be chiral.
A consequence of chirality is the need for enantiomeric resolution. While this is theoretically possible for all...

Coordination Number and Geometry

Coordination Number and Geometry

For transition metal complexes, the coordination number determines the geometry around the central metal ion. Table 1 compares coordination numbers to molecular geometry. The most common structures of the complexes in coordination compounds are octahedral, tetrahedral, and square planar.

Energy Bands in Solids

Energy Bands in Solids

Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...

Exceptions to the Octet Rule

Exceptions to the Octet Rule

Many covalent molecules have central atoms that do not have eight electrons in their Lewis structures. These molecules fall into three categories:

Types of Semiconductors

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

A Novel Approach for the Fabrication of Polarization-Selectivity UV Photosynapse Devices With PdSe<sub>2</sub>/ a-plane GaN Heterostructures.

Advanced materials (Deerfield Beach, Fla.)·2026

Same author

Correction to Rapid Substrate Neutralization via Side-Chain Hydroxylated Copolymers for Efficient Vertical Alignment of Block Copolymers.

ACS macro letters·2026

Same author

Group-III Nitride-Based Wide-Spectrum Multifunctional Synapses for Encrypted Light Communication and Image Recognition.

Small (Weinheim an der Bergstrasse, Germany)·2026

Same author

Rapid Substrate Neutralization via Side-Chain Hydroxylated Copolymers for Efficient Vertical Alignment of Block Copolymers.

ACS macro letters·2026

Same author

Ohmic contact engineering for two-dimensional material-based field-effect transistors: recent advances and perspectives.

Nanotechnology·2025

Same author

Comprehensive analog signal processing platform enabled by acoustic charge transport in two-dimensional materials.

Science advances·2025

Search research articles

Related Experiment Video

Updated: May 27, 2025

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

Two-dimensional material/group-III nitride hetero-structures and devices.

Tingting Lin¹, Yi Zeng², Xinyu Liao²

¹School of Integrated Circuits, South China University of Technology, Guangzhou 511442, People's Republic of China.

Reports on Progress in Physics. Physical Society (Great Britain)

|February 17, 2025

Summary

Advanced two-dimensional (2D) material/group-III nitride heterostructures offer enhanced device performance by addressing interface-related issues. This review summarizes their interface interactions, growth mechanisms, and diverse applications in electronics and sensors.

Keywords:

device group-III nitride growth mechanism hetero-structures two-dimensional material

More Related Videos

Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films

Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films

Published on: May 11, 2019

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Related Experiment Videos

Last Updated: May 27, 2025

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films

Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films

Published on: May 11, 2019

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Area of Science:

Materials Science and Engineering
Condensed Matter Physics
Nanotechnology

Background:

Two-dimensional (2D) materials like graphene and transition metal dichalcogenides (TMDs) are combined with group-III nitrides (e.g., GaN, AlN) to form heterostructures.
These heterostructures are crucial for next-generation devices, including photodetectors, LEDs, solar cells, and sensors.
Traditional challenges like carrier mobility, contact resistance, and lattice mismatch hinder device performance and reliability.

Purpose of the Study:

To provide a comprehensive summary of recent advancements in 2D material/group-III nitride heterostructures.
To elaborate on interface interactions, growth mechanisms, and device physics.
To review the diverse applications and future prospects of these advanced materials.

Main Methods:

Theoretical calculations to investigate interface interactions and heterojunction properties.
Experimental studies to analyze interface effects on material performance.
Detailed review of synthesis strategies and formation mechanisms for heterostructure growth.

Main Results:

Interface modifications, including band alignments and work function tuning, significantly enhance heterostructure properties.
Advanced synthesis strategies effectively address challenges in growing high-quality 2D material/group-III nitride heterostructures.
Heterostructures exhibit promising performance across optoelectronics, electronics, photocatalysis, and sensing applications.

Conclusions:

The synergistic integration of 2D materials and group-III nitrides offers a pathway to overcome performance degradation issues.
Understanding interface phenomena is key to unlocking the full potential of these heterostructures.
Continued research into 2D material/group-III nitride heterostructures is expected to drive innovation in various technological fields.