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Carrier recombination dynamics in [MAPbCl3][CsPbBr3]1- shell-passivated CsPbBr3 single crystals.
Zheng Zou1,2, Zijie Xiao1, Wenxin Dong3
1School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China. wzhang@gzhu.edu.cn.
Physical Chemistry Chemical Physics : PCCP
|February 19, 2025
Summary
A new heterostructure method effectively passivates surface traps in cesium lead bromide (CsPbBr3) single crystals. This passivation significantly reduces carrier recombination rates, enhancing semiconductor performance.
Area of Science:
- Materials Science
- Semiconductor Physics
- Photovoltaics
Background:
- Surface traps in CsPbBr3 single crystals (SCs) hinder performance by promoting carrier recombination.
- Passivation methods are crucial for improving semiconductor device efficiency.
Purpose of the Study:
- To develop and evaluate a heterostructure method for passivating surface traps in CsPbBr3 SCs.
- To correlate passivation effects with carrier recombination dynamics.
Main Methods:
- Employed time-resolved spectroscopic techniques: steady-state and time-resolved photoluminescence (TRPL) and time-resolved microwave photoconductivity (TRMC).
- Investigated carrier recombination in bare and [MAPbCl3]0.34[CsPbBr3]0.66-covered CsPbBr3 SCs, with and without choline bromide (CB) additives.
Main Results:
- Identified surface hole-trapping as dominant in bare CsPbBr3 SCs' TRPL kinetics.
- Observed charge carrier transfer from the shell to the CsPbBr3 crystal in heterostructures.
- The [MAPbCl3]0.34[CsPbBr3]0.66 shell reduced electron-trapping and hole-trapping rates by 2.2 and 5.2 times, respectively.
Conclusions:
- The [MAPbCl3]0.34[CsPbBr3]0.66 heterostructure effectively passivates surface traps in CsPbBr3 SCs.
- Choline bromide additives can introduce additional surface traps.
- The developed passivation strategy enhances CsPbBr3 crystal performance by mitigating recombination losses.
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