Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Polarization Engineering of Second-Harmonic Generation in 3R-MoS<sub>2</sub> Waveguides.

Nano letters·2026
Same author

The Generation and Control of Irregularly Shaped Perfect Vector Vortex Beams on Hybrid Poincaré Spheres Using All-Dielectric Metasurfaces.

Nanophotonics (Berlin, Germany)·2026
Same author

Microstructurally optimizing the mid-infrared optical modulation properties of vanadium oxide thin films <i>via</i> magnetron sputtering and subsequent annealing.

RSC advances·2026
Same author

Optical Manipulation-Prepared Edge-Contacted MoTe<sub>2</sub>-NbS<sub>2</sub> Heterojunction Photodetectors for High-Performance, Self-Powered, and Consistent Broadband Detection.

Small (Weinheim an der Bergstrasse, Germany)·2025
Same author

Highly Responsive Dual-Function Deep-Ultraviolet Neuromorphic Phototransistors Based on Silicon Carbide Nanoparticle/2D MoS<sub>2</sub> Heterostructures.

ACS nano·2025
Same author

Confinement-Enhanced Core-Shell Avalanche Photodetectors.

ACS nano·2025

Related Experiment Video

Updated: May 27, 2025

Free-form Light Actuators &#8212; Fabrication and Control of Actuation in Microscopic Scale
08:17

Free-form Light Actuators — Fabrication and Control of Actuation in Microscopic Scale

Published on: May 25, 2016

9.2K

High-Capacity Multilayered Luminescent Encryption Technology Based on Er-Implanted Silicon Treated by Pulsed Laser

Xiaobo Li1,2, Jiajing He1,2, Yibiao Hu1,2

  • 1Aerospace Laser Technology and System Department, CAS Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China.

ACS Applied Materials & Interfaces
|February 19, 2025
PubMed
Summary

Researchers developed advanced luminescent labels using femtosecond lasers and Er-doped silicon. This innovation enhances security and data capacity for anti-counterfeiting applications.

Keywords:
erbium-doped siliconfemtosecond laser annealinghigh resolutionluminescent labelmultilayer encryption

More Related Videos

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
08:48

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Published on: November 9, 2015

8.2K
Shaping the Amplitude and Phase of Laser Beams by Using a Phase-only Spatial Light Modulator
08:39

Shaping the Amplitude and Phase of Laser Beams by Using a Phase-only Spatial Light Modulator

Published on: January 28, 2019

9.7K

Related Experiment Videos

Last Updated: May 27, 2025

Free-form Light Actuators &#8212; Fabrication and Control of Actuation in Microscopic Scale
08:17

Free-form Light Actuators — Fabrication and Control of Actuation in Microscopic Scale

Published on: May 25, 2016

9.2K
Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
08:48

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Published on: November 9, 2015

8.2K
Shaping the Amplitude and Phase of Laser Beams by Using a Phase-only Spatial Light Modulator
08:39

Shaping the Amplitude and Phase of Laser Beams by Using a Phase-only Spatial Light Modulator

Published on: January 28, 2019

9.7K

Area of Science:

  • Materials Science
  • Optoelectronics
  • Photonics

Background:

  • Luminescent labels offer anti-counterfeiting solutions but face challenges in design complexity, space efficiency, and information capacity.
  • Existing methods for creating luminescent patterns often lack spatial precision and flexibility.

Purpose of the Study:

  • To develop a novel method for creating high-capacity, high-security luminescent encrypted labels.
  • To utilize femtosecond laser technology for precise fabrication of these labels.
  • To explore the potential of Er-doped silicon as a material for advanced optical applications.

Main Methods:

  • Fabrication of multilayer infrared luminescent encryption labels using femtosecond-laser-activated Er-doped silicon.
  • Employing femtosecond laser annealing for localized and controlled modification of Er-doped silicon.
  • Generating stable and controllable multilayered photoluminescent patterns with high spatial precision.

Main Results:

  • Successfully created multilayered photoluminescent patterns in Er-doped silicon with enhanced stability and control.
  • Demonstrated significant improvements in security features and information storage capacity compared to conventional methods.
  • Achieved a low-cost, high-capacity, and high-security encrypted label with practical application value.

Conclusions:

  • Femtosecond laser annealing provides a precise and flexible approach for fabricating advanced luminescent encryption labels.
  • Er-doped silicon processed with femtosecond lasers shows promise for high-capacity data storage and anti-counterfeiting.
  • This material is also a potential candidate for developing quantum light sources and gain materials for communication band lasers.