Competitive mechanism between light extraction efficiency and sidewall passivated effect in the green micro-LEDs with
Youcai Deng1,2, Denghai Li1, Yurong Dai1
1National Integrated Circuit Industry and Education Integration Innovation Platform, Department of Electronic Science, Xiamen University, Xiamen 361005, People's Republic of China.
Abstract:
In this study, green micro-light-emitting diodes (μ-LEDs) with Al2O3layers of varying thicknesses (0, 30, 60, and 90 nm) was fabricated using atomic layer deposition (ALD) technology. The optoelectronic characteristics of devices was measured and investigated. Current-voltage (I-V) measurements indicate that the ALD passivation layer effectively reduces leakage current. By applying theABC + f(n)model to analyze external quantum efficiency, the internal physical mechanisms that the ALD passivation layer enhances the optoelectronic performance of greenμ-LEDs was identified. Optical simulations demonstrated the transmittance relationship for different ALD passivation layer thicknesses, explaining improvements of light extraction efficiency. Furthermore, aging tests confirmed that the ALD passivation layer significantly increases the stability of greenμ-LEDs. These findings offer valuable insights for enhancing the luminous efficiency and reliability of greenμ-LEDs.
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