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Electrically-Switchable Gain in Optically Pumped CsPbBr3 Lasers With Low Threshold at Nanosecond Pumping
Yang Li1,2,3, Shangpu Liu2,4, Thomas Feeney2,3
1College of Materials Science and Engineering & Engineering Research Center of Alternative Energy Materials and Devices, Ministry of Education, Sichuan University, Chengdu, 610065, China.
Abstract:
Metal halide perovskites hold promise for nonepitaxial laser diodes, yet, continuous-wave (CW) optically pumped (photonic) lasing in CsPbBr3 remains elusive despite its superior thermal- and photo-stability among the perovskite family. This work reports on CsPbBr3 vertical cavity surface emitting lasers with low lasing thresholds (1.3 µJ cm- 2) at nanosecond pumping and remarkable lasing stability. Furthermore, the electrically switchable gain is achieved in CsPbBr3 electrically assisted optically pumped laser (EAOPL) devices by leveraging ion migration. Applying a small positive DC voltage to the EAOPL device significantly reduces the lasing threshold under nanosecond laser excitation and enhances the cavity mode intensity at CW laser excitation. These findings present a novel strategy, combining a small DC voltage with an electrical pulse, for exploring electrical injection lasing in CsPbBr3 perovskites.
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