High Performance Phototransistor Based on 0D-CsPbBr₃/2D-MoS₂ Heterostructure with Gate Tunable Photo-Response

Monolayer MoS₂ has been widely researched in high performance phototransistors for its high carrier mobility and strong photoelectric conversion ability. However, some defects in MoS₂, such as vacancies or impurities, provide more possibilities for carrier recombination; thus, restricting the formation of photocurrents and resulting in decreased responsiveness. Herein, all-inorganic CsPbBr₃ perovskite quantum dots (QDs) with high photoelectric conversion efficiency and light absorption coefficients are introduced to enhance the responsivity of a 2D MoS₂ phototransistor. The CsPbBr₃/MoS₂ heterostructure has a type II energy band, and it has a high responsivity of ~1790 A/W and enhanced detectivity of ~2.4 × 10¹¹ Jones. Additionally, the heterostructure CsPbBr₃/MoS₂ enables the synergistic effect mechanism of photoconduction and photogating effects with the gate tunable photo-response, which could also contribute to an improved performance of the MoS₂ phototransistor. This work provides new strategies for performance phototransistors and is expected to play an important role in many fields, such as optical communication, environmental monitoring and biomedical imaging, and promote the development and application of related technologies.