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Related Experiment Video

Updated: May 25, 2025

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Improving Reliability of 1 Selector-1 ReRAM Crossbar Arrays Through Hybrid Switching Methods.

Hyun Kyu Seo1, Min Kyu Yang1

  • 1Department of Artificial Intelligence Convergence, Sahmyook University, Seoul 01795, Republic of Korea.

Materials (Basel, Switzerland)
|February 26, 2025
PubMed
Summary

This study introduces a novel switching method for 1 Selector-1 ReRAM (1S1R) devices, enhancing reliability in 4K crossbar arrays. The approach uses DC sweeping and AC pulse resetting to prevent device breakdown, paving the way for advanced memory technologies.

Keywords:
crossbar arrayresistive random-access memoryselector

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Area of Science:

  • Materials Science and Engineering
  • Electrical Engineering
  • Solid-State Electronics

Background:

  • 1 Selector-1 ReRAM (1S1R) devices are crucial for high-density memory applications.
  • Ensuring the reliability and endurance of 1S1R devices in crossbar arrays (CBAs) is a significant challenge.
  • Existing switching methods can lead to device stress and breakdown, limiting performance.

Purpose of the Study:

  • To develop an innovative switching approach to enhance the reliability of 1S1R devices integrated into a 4K CBA.
  • To minimize device stress and prevent breakdown during set and reset operations.
  • To evaluate the performance and potential of the proposed switching strategy for future memory applications.

Main Methods:

  • Utilized DC sweeping for set operations and AC single-pulse resetting for reset operations in 1S1R devices.
  • Employed a GeSeTe ovonic threshold switching (OTS) element for the selector component.
  • Constructed the ReRAM component using a Pt/LiNbOx/W structure.
  • Integrated the selector and ReRAM into a 4K crossbar array (CBA) for testing.

Main Results:

  • The GeSeTe OTS selector exhibited excellent endurance (>1012 cycles), fast switching (<100 ns), and high uniformity (<5% variability).
  • The Pt/LiNbOx/W ReRAM demonstrated robust bipolar resistive switching, multi-bit capability, and endurance exceeding 1012 cycles.
  • The integrated 1S1R CBA showed reliable data retention and low operational variability.

Conclusions:

  • The novel switching approach significantly improves the reliability of 1S1R devices in a 4K CBA.
  • The demonstrated performance of the selector and ReRAM components highlights their suitability for advanced memory systems.
  • This work presents a promising pathway towards high-performance, high-density non-volatile memory applications.