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Research on High-Responsivity Si/Ge-APD in Visible-Near-Infrared Wide Spectrum with Light-Absorption-Enhanced
Guangtong Guo1,2,3,4, Weishuai Chen1,2,3,4, Kaifeng Zheng1,3,4
1Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
Sensors (Basel, Switzerland)
|February 26, 2025
Summary
This study introduces a novel Si/Ge avalanche photodiode with nanostructures for enhanced light absorption. The optimized design achieves broad spectral responsivity, crucial for advanced optoelectronic applications.
Area of Science:
- Optoelectronics and Semiconductor Devices
- Materials Science and Nanotechnology
Background:
- Broad spectral response and high responsivity are key for photodetectors in optoelectronics.
- Silicon-Germanium (Si/Ge) based avalanche photodiodes (APDs) are essential components.
Purpose of the Study:
- To propose and investigate a Si/Ge avalanche photodiode with nanostructures for enhanced light absorption and broad spectral responsivity.
- To optimize the device epitaxial structure and nanostructures for improved performance.
Main Methods:
- Fabrication of a Si/Ge avalanche photodiode incorporating surface photon-trapping nanoholes.
- Integration of SiO2 reflective grating nanostructures to enhance light absorption.
- Optimization of the epitaxial structure and nanostructure design.
Main Results:
- Achieved a wide spectral responsivity from 0.4 to 1.6 μm.
- Increased average light absorptivity from 0.64 to 0.84 (0.4-1.1 μm) and 0.31 to 0.56 (1.1-1.6 μm).
- Attained high responsivity of 17.24 A/W at 1.31 μm and 17.6 A/W at 1.55 μm at 0.95 Vbr-apd.
Conclusions:
- The proposed nanostructured Si/Ge avalanche photodiode demonstrates significant potential for broadband visible-near-infrared detection.
- The integration of photon-trapping nanoholes and reflective gratings effectively enhances light absorption.
- This research offers valuable insights for designing high-performance photodetectors.
