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Using a Heavy Inert Diffusion Additive for Superconformal Atomic Layer Deposition.

Arun Haridas Choolakkal1, Pamburayi Mpofu1, Pentti Niiranen1

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We developed a superconformal Atomic Layer Deposition (ALD) method using a heavy inert gas, Krypton (Kr), to improve thin-film deposition in nanoscale features. This novel approach enhances step coverage, crucial for advanced semiconductor manufacturing.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Chemical Engineering

Background:

  • Shrinking device nodes necessitate advanced deposition techniques for filling nanoscale features.
  • Atomic Layer Deposition (ALD) offers precision but lacks the superconformal V-shaped deposition required for certain applications.
  • Current ALD methods struggle with conformally filling high aspect ratio structures.

Purpose of the Study:

  • To develop a modified Atomic Layer Deposition (ALD) process for achieving superconformal thin-film deposition.
  • To investigate the use of a heavy inert gas as a diffusion additive to enhance step coverage in ALD.
  • To demonstrate the effectiveness of this strategy in filling high aspect ratio nanometer-scale features.

Main Methods:

  • Implemented a modified Atomic Layer Deposition (ALD) process incorporating Krypton (Kr) as a diffusion additive.
  • Utilized Aluminum Nitride (AlN) deposition from trimethylaluminum (Al(CH3)3) and ammonia (NH3) as a model system.
  • Analyzed step coverage in an 18:1 aspect ratio feature before and after Kr addition.

Main Results:

  • Achieved superconformal deposition, increasing step coverage from 1 to 1.6 in an 18:1 aspect ratio feature.
  • Observed enhanced diffusion of lighter precursor molecules (NH3) facilitated by heavier Kr gas.
  • Demonstrated a reduction in growth per cycle at feature openings due to directed diffusion.

Conclusions:

  • The addition of heavy inert gases like Kr enables superconformal Atomic Layer Deposition (ALD).
  • This method significantly improves step coverage in high aspect ratio nanostructures.
  • The proposed strategy holds broad applicability for various ALD processes in semiconductor fabrication.