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Updated: May 25, 2025

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
Substrate-Dependent Optical Blue-Shift upon F Incorporation in Oxyfluoride SrCo(O,F)3- Films
Tessa D Tucker1, Zongmin Yang1, David Bugallo1
1Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, United States.
Researchers engineered optoelectronic properties in strontium cobalt oxyfluoride films by incorporating fluorine. Strain influenced band gap increases and resistivity, showing promise for tuning material properties.
Area of Science:
- Materials Science
- Solid State Chemistry
- Thin Film Technology
Background:
- Heteroanionic oxides offer tunable properties and structural versatility.
- Epitaxial thin films are crucial for advanced electronic and optical devices.
Purpose of the Study:
- To investigate the optoelectronic properties of epitaxial strontium cobalt oxyfluoride (SrCo(O,F)3-) films.
- To understand the influence of topochemical fluorination and epitaxial strain on film properties.
Main Methods:
- Synthesis of SrCo(O,F)3- films on various perovskite substrates.
- Topochemical fluorination using poly(vinylidene fluoride) (PVDF) vapor.
- Characterization using X-ray photoelectron spectroscopy (XPS) and analysis of optoelectronic properties.
Main Results:
- Fluoride incorporation uniformly altered film composition to SrCoO2.2F0.6.
- Observed an expansion of the c-axis, increased resistivity, and a blue-shift in the optical absorption edge (0.18-0.5 eV).
- Band gap increase and resistivity enhancement correlated with substrate lattice parameters, indicating strain effects.
Conclusions:
- Epitaxial strain and fluoride site occupation interplay to control optoelectronic properties.
- Strain-dependent control of anionic arrangements is a viable strategy for engineering heteroanionic films.
- Oxyfluoride films demonstrate potential for tailored optoelectronic applications.
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