Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Fault Types01:18

Fault Types

63
When analyzing a single line-to-ground fault from phase A to ground at a three-phase bus, it is important to consider the fault impedance. This impedance is zero for a bolted fault, equal to the arc impedance for an arcing fault, and represents the total fault impedance for a transmission-line insulator flashover. To derive sequence and phase currents, fault conditions are translated from the phase domain to the sequence domain.
For line-to-line faults occurring between phases B and C, the...
63
Phase Transitions02:31

Phase Transitions

18.7K
Whether solid, liquid, or gas, a substance's state depends on the order and arrangement of its particles (atoms, molecules, or ions). Particles in the solid pack closely together, generally in a pattern. The particles vibrate about their fixed positions but do not move or squeeze past their neighbors. In liquids, although the particles are closely spaced, they are randomly arranged. The position of the particles are not fixed—that is, they are free to move past their neighbors to...
18.7K
Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

1.1K
When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's...
1.1K
Fermi Level Dynamics01:12

Fermi Level Dynamics

216
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
216

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

How reactive is water at the nanoscale and how to control it?

Science advances·2026
Same author

Nuclear quantum effects amplify autoionization-driven superionic behaviour in nanoconfined monolayer water.

Chemical science·2026
Same author

When is nanoconfined water different from interfacial water?

Faraday discussions·2026
Same author

Mechanisms for the formation of active sites in single-atom alloys.

Nanoscale·2026
Same author

Nanoconfined superionic water is a molecular superionic.

Science advances·2026
Same author

Breaking the Air-Water Paradigm: Ion Behavior at Hydrophobic Solid-Water Interfaces.

Journal of the American Chemical Society·2026

Related Experiment Video

Updated: May 24, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.4K

Defects induce phase transition from dynamic to static rippling in graphene.

Fabian L Thiemann1,2, Camille Scalliet3, Erich A Müller4

  • 1IBM Research Europe, Daresbury WA4 4AD, United Kingdom.

Proceedings of the National Academy of Sciences of the United States of America
|February 28, 2025
PubMed
Summary
This summary is machine-generated.

Defects in two-dimensional (2D) materials can transition ripples from dynamic to static above a critical concentration. This transition, driven by defect interactions, enables tailored 2D material properties and applications.

Keywords:
defectsgraphenemachine learning potentialtwo-dimensional materials

More Related Videos

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.1K
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

13.6K

Related Experiment Videos

Last Updated: May 24, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.4K
Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.1K
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

13.6K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Computational Nanoscience

Background:

  • Two-dimensional (2D) materials exhibit nanoscale dynamic ripples influencing their physical and chemical properties.
  • Crystal lattice defects are fundamental for tailoring the morphology and behavior of 2D materials.
  • The relationship between defects and rippling dynamics in 2D materials requires deeper investigation.

Purpose of the Study:

  • To comprehensively investigate the impact of defects on rippling dynamics in 2D materials.
  • To elucidate the transition mechanism from dynamic to static ripples in defective 2D materials.
  • To establish principles for designing 2D materials with controlled rippling characteristics.

Main Methods:

  • Utilized machine learning-driven molecular dynamics simulations for atomic-resolution analysis.
  • Investigated free-standing graphene sheets with varying defect concentrations.
  • Analyzed the elastic interactions between defects as the driving force for ripple dynamics.

Main Results:

  • Identified a critical defect concentration triggering a transition from dynamic to static ripples in graphene.
  • Revealed that elastic interactions between defects govern this dynamic-to-static transition.
  • Demonstrated that interaction strength varies with defect type, providing unifying principles.

Conclusions:

  • Defect concentration and type critically control ripple dynamics in 2D materials.
  • The findings rationalize experimental observations in defective 2D materials.
  • Opens pathways for designing novel disorder-based catalytic and interfacial 2D materials with tunable properties.