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Ferroelectric Tunable Nonvolatile Polarization Detection Based on 2H α-In2Se3.

Tengzhang Liu1,2, Xin Huang2,3, Zhuoxuan Han2

  • 1State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China.

ACS Applied Materials & Interfaces
|March 6, 2025
PubMed
Summary
This summary is machine-generated.

This study introduces a tunable polarization photodetector using 2H α-In2Se3. The ferroelectric semiconductor field-effect transistor (FeS-FET) offers nonvolatile polarization modulation for enhanced light detection capabilities.

Keywords:
2D materialsferroelectricityindium selenidespolarization detectiontunable

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Nanotechnology

Background:

  • Two-dimensional (2D) materials offer unique properties for polarization photodetectors.
  • Current photodetectors lack polarization tunability, limiting device versatility.

Purpose of the Study:

  • To explore a nonvolatile ferroelectric tunable polarization photodetector based on 2H α-In2Se3.
  • To demonstrate ferroelectric modulation of polarization sensitivity.

Main Methods:

  • Fabrication of 2H α-In2Se3 ferroelectric semiconductor field-effect transistors (FeS-FETs).
  • Investigation of ferroelectric modulation of photoelectric response under 650 nm illumination.

Main Results:

  • Achieved an on/off ratio of 10^3 for the FeS-FET.
  • Demonstrated a maximum optical responsivity of 75 A/W and detectivity of 1.46 × 10^10 jones.
  • Tuned dichroic ratios from 1.74 to 3 via ferroelectric polarization switching, with linear tunability observed.

Conclusions:

  • 2H α-In2Se3 is a promising material for polarization detection.
  • Nonvolatile ferroelectric modulation offers a new approach for tunable polarization photodetectors.