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Published on: March 24, 2019
Terahertz Spin-to-Charge Conversion in Strontium Iridate-Based Magnetic Heterostructures.
Ali Abdelaziem1,2,3, Ziqi Li4, Ganesh Ji Omar5
1Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis 08-03, Singapore, 138634, Singapore.
Researchers demonstrate ultrafast spin dynamics in cobalt/strontium iridate heterostructures for next-generation electronics. This work enables terahertz-frequency devices using tailored spin Hall effects at room temperature.
Area of Science:
- Condensed matter physics
- Materials science
- Spintronics
Background:
- Oxide interfaces are crucial for advanced electronics, enabling phenomena like superconductivity and topological states.
- Previous research primarily focused on gigahertz frequencies, limiting device operational speeds.
- Terahertz (THz) frequency devices offer new possibilities for ultrafast electronics.
Purpose of the Study:
- To investigate ultrafast spin dynamics at oxide interfaces for THz electronics.
- To demonstrate a novel heterostructure for generating an ultrafast inverse spin Hall effect.
- To explore control mechanisms for spin polarization and tailored spin Hall effects.
Main Methods:
- Fabrication of strontium iridate (SrIrO3) heterostructures with cobalt (Co) ultrathin layers.
- Photoexcitation of spins in Co using femtosecond lasers.
- Measurement of spin diffusion and inverse spin Hall effect in sub-picosecond timescales.
Main Results:
- Demonstrated ultrafast spin diffusion from Co to SrIrO3.
- Observed an ultrafast inverse spin Hall effect in sub-picosecond timescales.
- Showcased control over spin polarization and spin Hall effect using magnetic fields and laser fluence.
Conclusions:
- The proposed SrIrO3/Co heterostructure is a viable platform for ultrafast oxide electronics.
- Tailored spin Hall effects can be achieved for THz applications.
- The findings pave the way for room-temperature, next-generation ultrafast electronic devices.
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