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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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Self-Rectifying Resistive Memory with a Ferroelectric and 2D Perovskite Lateral Heterostructure.

Jeonghyeon Son1, Minsub Lee1, Arindam Sannyal2

  • 1School of Chemical Engineering, Pusan National University, Busandaehak-ro 63 beon-gil 2, Geumjeong-gu, Busan 46241, Republic of Korea.

ACS Nano
|March 10, 2025
PubMed
Summary

Researchers created a novel self-rectifying resistive memory device using a single layer of ferroelectric polymer and 2D perovskite. This device operates at ultralow voltages, achieving high resistance and rectification ratios for advanced memory applications.

Keywords:
ferroelectrichalide perovskitesmemristorsresistive memoryself-rectifying memory

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Area of Science:

  • Materials Science
  • Electronics
  • Nanotechnology

Background:

  • Integrating resistive switching and rectification in memory devices simplifies architecture and improves accuracy.
  • Achieving low-voltage operation for such devices remains a significant challenge.

Purpose of the Study:

  • To develop a self-rectifying resistive memory device capable of ultralow voltage operation.
  • To explore the potential of a phase-separated lateral heterostructure for combined memory and rectification functions.

Main Methods:

  • Fabrication of a memristive layer using spin-casting of a phase-separated lateral heterostructure.
  • Composition of the heterostructure: ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)] and 2D halide perovskite butylammonium lead iodide [BA2PbI4].
  • Characterization of the device's resistive switching and rectification properties.

Main Results:

  • The device operates at ultralow voltages with an excellent rectification ratio (>10^6 at ±0.1 V).
  • Demonstrated a high resistance switching ratio (>10^6) programmable at ±0.4 V.
  • Exhibited long data retention and stable endurance cycles.

Conclusions:

  • Lateral ferroelectric polarization in P(VDF-TrFE) effectively rectifies current in the BA2PbI4 channel.
  • The Ag/P(VDF-TrFE):BA2PbI4/indium tin oxide device shows promise for high-performance, low-voltage memory applications.