Self-Rectifying Resistive Memory with a Ferroelectric and 2D Perovskite Lateral Heterostructure

Area of Science:

• Materials Science
• Electronics
• Nanotechnology

Background:

• Integrating resistive switching and rectification in memory devices simplifies architecture and improves accuracy.
• Achieving low-voltage operation for such devices remains a significant challenge.

Purpose of the Study:

• To develop a self-rectifying resistive memory device capable of ultralow voltage operation.
• To explore the potential of a phase-separated lateral heterostructure for combined memory and rectification functions.

Main Methods:

• Fabrication of a memristive layer using spin-casting of a phase-separated lateral heterostructure.
• Composition of the heterostructure: ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)] and 2D halide perovskite butylammonium lead iodide [BA2PbI4].
• Characterization of the device's resistive switching and rectification properties.

Main Results:

• The device operates at ultralow voltages with an excellent rectification ratio (>10^6 at ±0.1 V).
• Demonstrated a high resistance switching ratio (>10^6) programmable at ±0.4 V.
• Exhibited long data retention and stable endurance cycles.

Conclusions:

• Lateral ferroelectric polarization in P(VDF-TrFE) effectively rectifies current in the BA2PbI4 channel.
• The Ag/P(VDF-TrFE):BA2PbI4/indium tin oxide device shows promise for high-performance, low-voltage memory applications.