Self-Driven High-Performance Gate-Voltage-Tunable and Enhanced Performance Optoelectronic Device Based on FePS₃/MoS₂...

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Van der Waals heterojunctions are essential for next-generation optoelectronic devices due to their high-quality interfaces.
• Two-dimensional (2D) materials offer unique electronic and optical properties for advanced device applications.

Purpose of the Study:

• To fabricate and investigate the electronic and optoelectronic properties of FePS3/MoS2 van der Waals heterojunctions.
• To enhance device performance by suppressing electron recombination in FePS3/MoS2 heterojunctions.

Main Methods:

• Fabrication of FePS3/MoS2 van der Waals heterojunctions.
• Characterization of electronic and optoelectronic properties, including rectification behavior and photodetection.
• Optimization by eliminating non-heterojunction regions on the FePS3 side to suppress electron recombination.

Main Results:

• Initial devices exhibited typical rectification with low ratios and electron-dominated conductivity.
• Optimized devices achieved a high rectification ratio of 6.3 × 10^4 and an ideality factor of 1.24.
• Demonstrated self-driven photodetection with responsivity of 203 mA/W, response/recovery times of 70.4/92 μs, and an on/off ratio of 5.4 × 10^3.
• Further improvement of responsivity to 1.4 A/W and on/off ratio to 1.2 × 10^5 via gate voltage modulation.

Conclusions:

• Suppression of electron recombination significantly enhances the performance of FePS3/MoS2 heterojunction devices.
• The fabricated devices show promising potential for high-performance optoelectronic applications.
• Results provide valuable insights for developing advanced devices based on 2D materials and heterojunctions.