Programmable 2H-MoTe₂ FGFET-Based CMOS Array.

Area of Science:

• Materials Science
• Electrical Engineering
• Nanotechnology

Background:

• Two-dimensional (2D) materials offer unique electronic properties for next-generation devices.
• Integrating memory and logic functions is crucial for energy-efficient computing.

Purpose of the Study:

• To fabricate a programmable 2D material-based complementary metal oxide semiconductor (CMOS) array.
• To demonstrate logic functions and memory capabilities in a 2D material system.
• To explore energy-efficient logic-in-memory circuits.

Main Methods:

• Fabrication of a 2H-MoTe₂ floating-gate field-effect transistor (FGFET)-based CMOS array using coplanar 1T'-MoTe₂ electrodes.
• Manipulation of 2H-MoTe₂ channel conductivity via top-gate engineering for p/n-type conversion.
• Implementation of programming voltage pulses to modulate device characteristics.

Main Results:

• Achieved a memory window of ~10.6 V and ultra-low power consumption of 0.39 nW.
• Demonstrated stable and reproducible logic functions with a high device yield of 90%.
• Successfully integrated memory and logic functionalities on a single chip.

Conclusions:

• The developed 2D material CMOS array enables energy-efficient logic-in-memory operations.
• The fabrication process is compatible with silicon-based manufacturing, facilitating scalability.
• This work opens new avenues for advanced 2D material-based electronic circuits.