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Published on: March 24, 2019
Proximity-Mediated Multi-Ferroelectric Coupling in Highly Strained EuO-Graphene Heterostructures
Satakshi Pandey1, Thomas Pin1, Simon Hettler2,3
1Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, Strasbourg, F-67000, France.
Researchers unveil a novel magnetoelectric effect in Europium Oxide (EuO)/graphene heterostructures. This discovery enables strain-induced ferroelectricity and magnetism, paving the way for advanced spintronic and neuromorphic devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- 2D van der Waals materials and heterostructures are key for exploring quantum hybridization effects.
- The magnetic proximity effect in spintronics utilizes spin-dependent hybridization.
- Previous theoretical work predicted strain-induced ferroelectricity in Europium Oxide (EuO).
Purpose of the Study:
- To investigate the proximity-controlled magnetoelectric effect in EuO/graphene heterostructures.
- To create a novel multiferroic hybrid heterostructure with multifunctional properties.
- To confirm theoretical predictions of strain-induced ferroelectricity in EuO.
Main Methods:
- Growth of magnetic insulating EuO thin films on graphene using a topotactic method.
- Application of high compressive strain to the EuO/graphene heterostructure.
- Characterization of magnetoelectric and ferroelectric properties at room temperature.
Main Results:
- A new multiferroic hybrid heterostructure (EuO/graphene) was successfully created.
- High compressive strain induced ferroelectric order in EuO, reaching 18 µC cm⁻² polarization at room temperature.
- EuO induced a magnetic proximity state in the graphene layer via interfacial hybridization.
- Coexistence of ferroelectric and magnetic states in the heterostructure up to room temperature.
Conclusions:
- The study demonstrates a proximity-controlled magnetoelectric effect in strained EuO/graphene heterostructures.
- The observed phenomena confirm long-standing theoretical predictions of strain-induced ferroelectricity in EuO.
- These findings highlight the potential for manipulating magnetization and electric polarization in future memory and neuromorphic devices.
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