Intrinsic Breakdown Strength: Theoretical Derivation and First-Principles Calculations

Area of Science:

• Materials Science
• Condensed Matter Physics
• Electrical Engineering

Background:

• Intrinsic breakdown strength (Fbd) is crucial for dielectric and safety performance.
• A larger band gap (Eg) is traditionally thought to correlate with higher Fbd.
• Understanding Fbd determinants is key for advancing high-power electronic devices.

Purpose of the Study:

• To analytically derive a simplified model for intrinsic breakdown strength (Fbd).
• To investigate the relationship between Fbd, band gap (Eg), and maximum electron density of states (DOSmax).
• To explore dimensional effects on Fbd.

Main Methods:

• Analytical derivation of a simplified Fbd model.
• Utilizing the Wannier interpolation technique for efficient Fbd calculations.
• Comparing calculated Fbd with band gap and DOSmax across various materials.

Main Results:

• A linear relationship was found between Fbd and DOSmax, consistent with the derived model.
• No simple correlation was observed between Fbd and band gap (Eg).
• Monolayer materials exhibit enhanced Fbd due to reduced screening effects.

Conclusions:

• Maximum electron density of states (DOSmax) is a more fundamental predictor of Fbd than band gap.
• The derived model provides physical insights into intrinsic dielectric breakdown.
• Findings pave the way for designing improved high-power electronic devices.