Related Experiment Video
Updated: May 22, 2025

Reconfigurable Microfluidic Channel with Pin-discretized Sidewalls
Published on: April 12, 2018
Reconfigurable Multifunctional Semifloating Gate Transistors Based on the ReSe2/h-BN/Graphene van der Waals
Wei Li1, Tianhui Mu1, Ze Sun1
1School of Microelectronics, Northwestern Polytechnical University, 127 Youyi West Road, Xi'an 710072, People's Republic of China.
Researchers developed a novel multifunctional device using 2D rhenium disulfide (ReSe₂) for advanced nonvolatile memory and logic applications. This device integrates reconfigurable logic, photodetection, and artificial synaptic functions, paving the way for next-generation computing chips.
Area of Science:
- Materials Science
- Nanotechnology
- Electronics Engineering
Background:
- The post-Moore era demands novel devices for nonvolatile memory and reconfigurable logic.
- Two-dimensional (2D) materials offer unique properties like atomically flat surfaces and high carrier mobility.
- Rhenium disulfide (ReSe₂) is a promising 2D material due to its ambipolar characteristics and optoelectronic response.
Purpose of the Study:
- To fabricate and characterize a multifunctional semifloating gate (MFSFG) device using ReSe₂.
- To explore the device's capabilities as bidirectional nonvolatile reconfigurable homojunctions, photodetectors, and artificial synapses.
- To demonstrate the device's potential for reconfigurable logic and half-wave rectification.
Main Methods:
- Fabrication of ReSe₂/h-BN/Gr MFSFG devices.
- Electrical characterization of device performance, including rectification ratios, endurance, and retention.
- Optoelectronic measurements under 532 nm illumination to assess photodetector performance.
- Evaluation of synaptic plasticity and implementation in a convolutional neural network.
- Demonstration of logical functions (XOR, XNOR, NAND, OR) and half-wave rectification.
Main Results:
- Achieved high rectification ratios of ~10⁶ (P-N) and ~10⁴ (N-P) with excellent endurance and retention.
- Demonstrated superior photodetector performance with high responsivity and detectivity.
- Successfully emulated synaptic plasticity, achieving high classification accuracy in a neural network.
- Integrated multiple logic functions and half-wave rectification within a single device under photoelectrical control.
Conclusions:
- The ReSe₂/h-BN/Gr MFSFG device offers a versatile platform for multifunctional electronic applications.
- This work advances the use of 2D materials in neuromorphic computing and logic-in-memory architectures.
- The device's capabilities pave the way for next-generation integrated circuits beyond traditional scaling.
Related Concept Videos
Field Effect Transistor
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...

