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Related Concept Videos

MOSFET: Enhancement Mode01:22

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
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Stacked Nanosheet Gate-All-Around Morphotropic Phase Boundary Field-Effect Transistors.

Sihyun Kim1, Hyun-Min Kim2, Ki-Ryun Kwon2

  • 1Department of Electronic Engineering, Sogang University, Seoul, 04107, Republic of Korea.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|March 17, 2025
PubMed
Summary

Ferroelectric-antiferroelectric mixed-phase Hafnium Zirconium Oxide (HZO) enhances performance in novel morphotropic phase boundary field-effect transistors (MPB-FETs). These devices show improved current, voltage scalability, and endurance for low-power electronics.

Keywords:
HZO, morphotropic phase boundarycapacitance‐boostingeffective oxide thicknessfield‐effect transistorgate‐all‐aroundhigh‐κ, hysteresis‐freenanosheet

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Area of Science:

  • Materials Science
  • Semiconductor Device Physics
  • Nanotechnology

Background:

  • Ferroelectric (FE) and antiferroelectric (AFE) materials offer unique electrical properties.
  • Hafnium Zirconium Oxide (HZO) is a promising material for advanced gate dielectrics.
  • Morphotropic phase boundary (MPB) phenomena in ferroelectrics enable enhanced device characteristics.

Purpose of the Study:

  • To investigate the performance improvements in field-effect transistors (FETs) using mixed-phase HZO.
  • To explore the potential of MPB-FETs for high-speed and low-power applications.
  • To fabricate and characterize novel two-stacked nanosheet (NS) gate-all-around (GAA) MPB-FETs.

Main Methods:

  • Material design using FE-AFE mixed-phase HZO.
  • Fabrication of two-stacked NS GAA MPB-FETs.
  • Electrical characterization including capacitance, transient current, and bias temperature instability (BTI) measurements.

Main Results:

  • MPB-FETs exhibit steep subthreshold swing (SS) and enhanced non-hysteretic on-current (Ion).
  • Near-threshold voltage (VTH) capacitance amplification contributes to Ion boosts.
  • NS MPB-FETs demonstrate superior short channel effect (SCE) immunity, enhanced current drivability, and over 10-year endurance at 0.6V and 120°C.
  • Achieved 24.1% Ion gain, 82.5 mV operating voltage scalability, and 30.7% AC performance improvement compared to control MOSFETs.

Conclusions:

  • Mixed-phase HZO in MPB-FETs enables significant performance enhancements.
  • NS MPB-FETs are suitable for low-power, high-performance CMOS technology.
  • The material design strategy allows effective oxide thickness scaling without mobility degradation.