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Related Concept Videos

Allosteric Proteins-ATCase01:19

Allosteric Proteins-ATCase

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Binding sites linkages can regulate a protein's function.  For example, enzyme activity is often regulated through a feedback mechanism where the end product of the biochemical process serves as an inhibitor.
Aspartate transcarbamoylase (ATCase) is a cytosolic enzyme that catalyzes the condensation of L-aspartate and carbamoyl phosphate to  N-carbamoyl-L-aspartate. This reaction is the first step in pyrimidine biosynthesis. UTP and CTP, the end products of the pyrimidine synthesis...
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Structural Properties
Alkyl halides are halogen-substituted alkanes wherein one or more hydrogen atoms of an alkane is replaced by a halogen atom such as fluorine, chlorine, bromine, or iodine. The carbon atom in an alkyl halide is bonded to the halogen atom, which is sp3-hybridized and exhibits a tetrahedral shape.
Unlike alkyl halides, compounds in which a halogen atom is bonded to an sp2 -hybridized carbon atom of a carbon-carbon double bond (C=C) are called vinyl halides. Whereas aryl...
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Dehydration of Aldols to Enals: Base-Catalyzed Aldol Condensation01:14

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This lesson delves into the aldol condensation catalyzed by bases, where aldols undergo dehydration to enals. As shown in Figure 1, the β-hydroxy aldehyde formed in a base-catalyzed aldol addition reaction dehydrates on heating to yield an unsaturated carbonyl product, which is commonly referred to as an enal.
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Allosteric Regulation01:08

Allosteric Regulation

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Allosteric regulation of enzymes occurs when the binding of an effector molecule to a site that is different from the active site causes a change in the enzymatic activity. This alternate site is called an allosteric site, and an enzyme can contain more than one of these sites. Allosteric regulation can either be positive or negative, resulting in an increase or decrease in enzyme activity. Most enzymes that display allosteric regulation are metabolic enzymes involved in the degradation or...
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Intramolecular Aldol Reaction01:18

Intramolecular Aldol Reaction

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Intramolecular aldol reaction occurs in dicarbonyl compounds such as dialdehydes, diketones, and keto-aldehydes. The dicarbonyl compounds possess more than one nucleophilic ⍺ carbon for the base to deprotonate and form the enolates. For example, in symmetrical diketones, there are four ⍺ carbons. Hence, four types of enolates are possible when treated with a base. However, since the molecule is symmetrical, the enolates formed on either side of one...
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Acid Halides to Alcohols: LiAlH4 Reduction01:19

Acid Halides to Alcohols: LiAlH4 Reduction

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Acid halides are reduced to alcohols in the presence of a strong reducing agent like lithium aluminum hydride.
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Use of Alu Element Containing Minigenes to Analyze Circular RNAs
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Al0.68Sc0.32N/SiC-Based Metal-Ferroelectric-Semiconductor Capacitors Operating up to 1000 °C.

Yunfei He1, David C Moore2, Yubo Wang1

  • 1Department of Electrical and System Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.

Nano Letters
|March 17, 2025
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High-temperature nonvolatile memory devices using ferroelectric aluminum scandium nitride (AlScN) on silicon carbide (SiC) show stable operation up to 1000 °C. These metal-ferroelectric-semiconductor capacitors demonstrate excellent reliability and data retention at extreme temperatures.

Keywords:
AlScNFerroelectricsHigh-temperatureNonvolatileSilicon carbide

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Electrical Engineering

Background:

  • Ferroelectric materials are crucial for nonvolatile memory but often fail at high temperatures.
  • Existing devices lack reliable high-temperature performance, limiting applications.

Purpose of the Study:

  • To develop and characterize metal-ferroelectric-semiconductor capacitors for high-temperature nonvolatile memory.
  • To evaluate the performance and reliability of AlScN thin films on SiC at elevated temperatures.

Main Methods:

  • Fabrication of Ni/Al0.68Sc0.32N/4H-SiC metal-ferroelectric-semiconductor capacitors.
  • Testing of ferroelectric switching, coercive field, endurance, and data retention up to 1000 °C.

Main Results:

  • Stable ferroelectric switching observed in 30 nm AlScN films on SiC up to 1000 °C.
  • Coercive field showed a linear decrease with temperature, reaching -2.5 MV cm-1 at 1000 °C.
  • Devices demonstrated ~2000 endurance cycles and 100 h retention at 600 °C, and 10,000 s retention at 800 °C.

Conclusions:

  • Ferroelectric AlScN thin films on SiC are highly promising for robust high-temperature nonvolatile memory applications.
  • The demonstrated stability and reliability at extreme temperatures open new avenues for advanced memory technologies.