Comment on "Submicron Memtransistors Made from Monocrystalline Molybdenum Disulfide"

A three-terminal memtransistor utilizing monocrystalline molybdenum disulfide (MoS₂) as the channel material and semimetal source/drain electrode has been reported by Yang et al. (ACS Nano 2024, 18, 6936-6945). The article attributes the memory characteristics to charge trapping and detrapping at the interface between the HfO₂ gate oxide and MoS₂. Additionally, multiple memory states were achieved by applying different gate pulses, highlighting the device's high potential for neuromorphic computing applications. According to the article, these behaviors stem from space charge-limited current (SCLC) and trap-filled limit (TFL) mechanisms. However, our in-depth analysis of the reported current-voltage characteristics indicates that these models are somewhat insufficient and inappropriate. This work offers an alternative explanation for the observed results and proposes a more accurate working model with sound physical justifications. The different physical mechanisms derived from this study are expected to significantly impact the further development and improvement of the proposed memtransistors.