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Hei Wong

Showing results (1-10 of 171) with videos related to

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ACS Applied Materials & Interfaces|February 21, 2024
Comment on "Bipolar Resistive Switching in Lanthanum Titanium Oxide and an Increased On/Off Ratio Using an Oxygen-Deficient ZnO Interlayer"Hei Wong
Nanomaterials (Basel, Switzerland)|December 11, 2022
Abridging CMOS TechnologyHei Wong
ACS Nano|March 18, 2025
Comment on "Submicron Memtransistors Made from Monocrystalline Molybdenum Disulfide"Hei Wong
Nanomaterials (Basel, Switzerland)|June 13, 2024
Abridging the CMOS Technology IIHei Wong
Nanomaterials (Basel, Switzerland)|May 28, 2022
On the Vertically Stacked Gate-All-Around Nanosheet and Nanowire Transistor Scaling beyond the 5 nm Technology NodeHei Wong, Kuniyuki Kakushima
Nanomaterials (Basel, Switzerland)|February 11, 2023
Poole-Frenkel (PF)-MOS: A Proposal for the Ultimate Scale of an MOS TransistorHei Wong, Kuniyuki Kakushima
Journal of Nanoscience and Nanotechnology|May 16, 2009
Probability current and antiresonances of particle tunneling through biased heterostructuresV Filip, D Nicolaescu, Hei Wong
Nanomaterials (Basel, Switzerland)|February 23, 2024
Contacts at the Nanoscale and for NanomaterialsHei Wong, Jieqiong Zhang, Jun Liu
Journal of Nanoscience and Nanotechnology|May 16, 2009
Photoluminescence of silicon nanocrystals embedded in silicon oxideC K Wong, Hei Wong, V Filip
Nanomaterials (Basel, Switzerland)|August 27, 2021
Characteristic Variabilities of Subnanometer EOT La<sub>2</sub>O<sub>3</sub> Gate Dielectric Film of Nano CMOS DevicesHei Wong, Jieqiong Zhang, Hiroshi Iwai, et al.
Pageof 18

Showing results (1-10 of 171) with videos related to

Sort By:
Pageof 18
ACS Applied Materials & Interfaces|February 21, 2024
Comment on "Bipolar Resistive Switching in Lanthanum Titanium Oxide and an Increased On/Off Ratio Using an Oxygen-Deficient ZnO Interlayer"Hei Wong
Nanomaterials (Basel, Switzerland)|December 11, 2022
Abridging CMOS TechnologyHei Wong
ACS Nano|March 18, 2025
Comment on "Submicron Memtransistors Made from Monocrystalline Molybdenum Disulfide"Hei Wong
Nanomaterials (Basel, Switzerland)|June 13, 2024
Abridging the CMOS Technology IIHei Wong
Nanomaterials (Basel, Switzerland)|May 28, 2022
On the Vertically Stacked Gate-All-Around Nanosheet and Nanowire Transistor Scaling beyond the 5 nm Technology NodeHei Wong, Kuniyuki Kakushima
Nanomaterials (Basel, Switzerland)|February 11, 2023
Poole-Frenkel (PF)-MOS: A Proposal for the Ultimate Scale of an MOS TransistorHei Wong, Kuniyuki Kakushima
Journal of Nanoscience and Nanotechnology|May 16, 2009
Probability current and antiresonances of particle tunneling through biased heterostructuresV Filip, D Nicolaescu, Hei Wong
Nanomaterials (Basel, Switzerland)|February 23, 2024
Contacts at the Nanoscale and for NanomaterialsHei Wong, Jieqiong Zhang, Jun Liu
Journal of Nanoscience and Nanotechnology|May 16, 2009
Photoluminescence of silicon nanocrystals embedded in silicon oxideC K Wong, Hei Wong, V Filip
Nanomaterials (Basel, Switzerland)|August 27, 2021
Characteristic Variabilities of Subnanometer EOT La<sub>2</sub>O<sub>3</sub> Gate Dielectric Film of Nano CMOS DevicesHei Wong, Jieqiong Zhang, Hiroshi Iwai, et al.
Pageof 18