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Related Concept Videos

P-N junction01:11

P-N junction

438
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
438
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

264
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
264
Electron Transport Chains01:28

Electron Transport Chains

96.7K
The final stage of cellular respiration is oxidative phosphorylation that consists of two steps: the electron transport chain and chemiosmosis. The electron transport chain is a set of proteins found in the inner mitochondrial membrane in eukaryotic cells. Its primary function is to establish a proton gradient that can be used during chemiosmosis to produce ATP and generate electron carriers, such as NAD+ and FAD, that are used in glycolysis and the citric acid cycle.
The ETC is comprised of...
96.7K
Ionic Bonding and Electron Transfer02:48

Ionic Bonding and Electron Transfer

40.2K
Ions are atoms or molecules bearing an electrical charge. A cation (a positive ion) forms when a neutral atom loses one or more electrons from its valence shell, and an anion (a negative ion) forms when a neutral atom gains one or more electrons in its valence shell. Compounds composed of ions are called ionic compounds (or salts), and their constituent ions are held together by ionic bonds: electrostatic forces of attraction between oppositely charged cations and anions. 
40.2K
Thermal and Photochemical Electrocyclic Reactions: Overview01:26

Thermal and Photochemical Electrocyclic Reactions: Overview

2.3K
Electrocyclic reactions are reversible reactions. They involve an intramolecular cyclization or ring-opening of a conjugated polyene. Shown below are two examples of electrocyclic reactions. In the first reaction, the formation of the cyclic product is favored. In contrast, in the second reaction, ring-opening is favored due to the high ring strain associated with cyclobutene formation.
2.3K

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Electron Transport in Borophene-Graphene Lateral Edge-Edge Junctions.

Yuefei Huang1, Henry Yu1, Favian Sun1

  • 1Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States.

ACS Nano
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Summary

Borophene-graphene heterojunctions show promise for nanoelectronics. Borophene

Keywords:
borophenecontact resistanceedge contactsgrapheneheterojunctionquantum transport

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Lateral heterojunctions between borophene and graphene are a recent breakthrough.
  • Understanding electron transport at this interface is crucial for nanoelectronic applications.

Purpose of the Study:

  • To investigate the electron transport properties of the borophene-graphene interface.
  • To calculate the transmission spectrum and contact resistance of the junction.

Main Methods:

  • Density functional theory (DFT) calculations.
  • Non-equilibrium Green's function (NEGF) method.
  • Analysis of electron transmission based on energy, momentum, and wave function symmetry matching.

Main Results:

  • Borophene's σ electrons are fully reflected at the interface.
  • Borophene's π electrons exhibit high transmission probability (up to 0.8).
  • Achieved low contact resistance of ~115 Ω·μm at a doping level of 2 × 1012 cm2.

Conclusions:

  • Borophene demonstrates excellent conductivity in graphene-based devices.
  • The achieved contact resistance is superior to that of traditional metal contacts like Pd and Au.
  • Borophene is a promising material for advanced nanoelectronic applications.